Details

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BUY 2SC4441 https://www.utsource.net/itm/p/6782387.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	60	V	IC = 0.5A, Tc = 25°C
Collector-Base Voltage	VCBO	-	-	70	V	IC = 0, Tc = 25°C
Emitter-Base Voltage	VEBO	-	-	6	V	IE = 1mA, Tc = 25°C
Collector Current	IC	-	-	0.5	A	VCE = 30V, Tc = 25°C
DC Current Gain	hFE	80	250	600	-	IC = 150mA, VCE = 10V
Transition Frequency	fT	-	250	-	MHz	IC = 150mA, VCE = 10V
Storage Temperature	Tstg	-55	-	150	°C	-

Instructions for Use:

1. Mounting and Handling:

   • Handle the transistor carefully to avoid damage.
   • Ensure proper heat sinking if operating at high currents or power levels.

2. Biasing:

   • Bias the base-emitter junction with sufficient voltage to ensure reliable operation within the specified current gain range.

3. Operating Limits:

   • Do not exceed the maximum ratings provided in the table as this can lead to device failure.
   • Operate within the recommended temperature range to ensure stable performance.

4. Storage and Environment:

   • Store in a dry environment to prevent moisture damage.
   • Protect from electrostatic discharge (ESD) during handling and storage.

5. Application Considerations:

   • Verify that the application circuit does not subject the transistor to conditions outside its safe operating area (SOA).
   • For high-frequency applications, consider the transition frequency limitations.

6. Testing:

   • Test the device parameters under controlled conditions to ensure they meet the specifications before incorporating into a design.

(For reference only)