Details
BUY IRFIBE30GPBF https://www.utsource.net/itm/p/6783251.html
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-source On-Resistance | RDS(on) | - | 0.058 | - | Ω | VGS = 10V, ID = 20A |
Gate Threshold Voltage | VGS(th) | 2.0 | - | 4.0 | V | ID = 250μA |
Continuous Drain Current | ID | - | - | 37 | A | TC = 25°C |
Pulse Drain Current | ID(pulse) | - | - | 110 | A | t = 10μs, TC = 25°C |
Power Dissipation | PD | - | - | 290 | W | TC = 25°C |
Total Gate Charge | Qg | - | 65 | - | nC | VGS = ±15V, ID = 20A |
Input Capacitance | Ciss | - | 2400 | - | pF | VDS = 20V, VGS = 0V |
Output Capacitance | Coss | - | 270 | - | pF | VDS = 20V, VGS = 0V |
Reverse Transfer Capacitance | Crss | - | 750 | - | pF | VDS = 20V, VGS = 0V |
Instructions for Use:
Mounting and Handling:
- Ensure the device is handled with care to avoid damage to leads or body.
- Follow proper mounting techniques to ensure good thermal contact and electrical connections.
Biasing and Operation:
- Apply gate voltage within specified limits to prevent damage.
- Operate within continuous and pulse current ratings to avoid overheating and potential failure.
Thermal Management:
- Use appropriate heatsinks or cooling methods if operating near maximum power dissipation.
- Ensure adequate ventilation or forced air cooling in high-power applications.
Storage and Protection:
- Store in a dry, cool environment away from direct sunlight.
- Protect from electrostatic discharge (ESD) using ESD-safe packaging and practices.
Testing:
- Verify all parameters meet specifications before integrating into circuits.
- Perform initial testing under controlled conditions to validate performance.
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