Details

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BUY MDF9N50BTH https://www.utsource.net/itm/p/6783850.html

Parameter	Symbol	Value	Unit	Conditions
Maximum Drain Voltage	VDSS	500	V
Maximum Gate Voltage	VGS	±20	V
Continuous Drain Current	ID	9.5	A	@Tc=25°C
Pulse Drain Current	Ipp	78	A	tp=10μs, Duty=1%
Gate-Source Threshold Voltage	VGS(th)	1.0 to 3.0	V	ID=1mA
On-State Resistance	RDS(on)	0.46	Ω	@VGS=10V, ID=9.5A
Input Capacitance	Ciss	1800	pF	@VDS=30V, f=1MHz
Total Power Dissipation	PD	175	W	@Tc=25°C
Junction Temperature	Tj	-55 to +175	°C

Instructions for Use:

1. Voltage Handling: Ensure that the drain-source voltage (VDSS) does not exceed 500V to prevent damage.
2. Current Limitations: Operate within the continuous drain current (ID) limit of 9.5A at a case temperature of 25°C. For pulse conditions, do not exceed 78A with a pulse width of 10μs and duty cycle of 1%.
3. Gate Operation: The gate-source voltage (VGS) should be kept within ±20V to avoid damaging the gate oxide.
4. Temperature Considerations: The device can operate within a junction temperature range from -55°C to +175°C. Ensure adequate heat sinking if operating near the upper temperature limit.
5. Capacitance Awareness: Be aware of the input capacitance (Ciss) value when designing circuits to minimize switching losses.
6. Power Dissipation: Manage power dissipation (PD) by ensuring it does not exceed 175W at a case temperature of 25°C.
7. Threshold Voltage: The gate-source threshold voltage (VGS(th)) varies between 1.0V and 3.0V. Ensure your circuit design accounts for this variability for reliable turn-on.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)