Details
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Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Drain-source on-resistance | RDS(on) | VGS = 10V, ID = 8A | - | 0.035 | - | Ω |
Continuous drain current | ID | Tc = 25°C | - | 8 | - | A |
Continuous drain current | ID | Tc = 70°C | - | 6.4 | - | A |
Pulse drain current | IDM | tp = 10ms, Rep rate = 1Hz | - | 24 | - | A |
Gate-source threshold voltage | VGS(th) | ID = 1mA | 2 | - | 4 | V |
Total gate charge | Qg | VDS = 200V, ID = 8A | - | 41 | - | nC |
Input capacitance | Ciss | VGS = 10V | - | 1200 | - | pF |
Output capacitance | Coss | VDS = 200V | - | 290 | - | pF |
Reverse transfer capacitance | Crss | VDS = 200V, ID = 8A | - | 100 | - | pF |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage thermal resistance.
- Handle with care to avoid static damage; use ESD precautions.
Biasing and Operation:
- Apply gate-source voltage (VGS) within the specified range to ensure reliable operation.
- Do not exceed the maximum continuous drain current (ID) ratings at specified temperatures.
Pulse Current Considerations:
- For pulse applications, do not exceed the pulse drain current (IDM) specifications to prevent overheating.
Capacitance Management:
- Account for input, output, and reverse transfer capacitances in high-frequency switching applications to minimize switching losses.
Storage and Packaging:
- Store in a dry environment away from direct sunlight and extreme temperatures.
- Follow manufacturer guidelines for packaging and transportation to avoid physical damage.
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