Details

---

BUY 2SK2082-01 https://www.utsource.net/itm/p/6784748.html

Parameter	Description	Value	Unit
Type	Description	N-Channel MOSFET	-
VDSS	Drain-Source Voltage	200	V
ID	Continuous Drain Current	4.5	A
PD	Total Power Dissipation	17	W
RDS(on)	On-State Resistance at VGS=10V	0.38	Ω
VGS(th)	Gate Threshold Voltage	2.0 to 4.0	V
fT	Transition Frequency	6.0	MHz
Qg	Total Gate Charge	40	nC
Input Capacitance	Ciss	1050	pF
Output Capacitance	Coss	175	pF
Reverse Transfer	Crss	320	pF
Package	Type	TO-220	-

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation.
2. Handling: Handle with care to avoid damage to the gate, which can be sensitive to ESD (Electrostatic Discharge).
3. Operating Conditions: Operate within specified voltage and current limits to prevent damage or reduced lifespan.
4. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
5. Soldering: Use recommended soldering temperatures and profiles to avoid thermal shock.
6. Testing: When testing the device, ensure all connections are secure and follow safety guidelines to prevent accidental short circuits.

(For reference only)