Details

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BUY SIHF22N60E-E3 https://www.utsource.net/itm/p/6784762.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-Resistance	RDS(on)	VGS = 10V, ID = 14A		22		mΩ
Gate Charge	QG			78		nC
Input Capacitance	Ciss	VDS = 30V		1950		pF
Output Capacitance	Coss	VDS = 30V		360		pF
Total Capacitance	Crss	VDS = 30V		1680		pF
Threshold Voltage	VGS(th)	ID = 250μA	2.0	4.0	6.0	V
Continuous Drain Current	ID	TC = 25°C			14	A
Pulse Drain Current	Ipp	tp = 10ms, Rep Rate			52	A
Power Dissipation	PD	TC = 25°C			160	W
Junction Temperature	Tj	Operating Range	-55		150	°C
Storage Temperature	Tstg		-55		150	°C

Instructions for SIHF22N60E-E3:

1. Handling and Storage:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid static discharge which can damage the component.

2. Mounting and PCB Design:

   • Ensure adequate heat sinking if operating near maximum power dissipation.
   • Use wide traces on the PCB for low resistance paths from drain to source.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Keep the junction temperature within the specified range to ensure reliable operation.

4. Testing:

   • When testing, ensure that gate drive voltages do not exceed the threshold voltage limits.
   • Measure RDS(on) at the specified VGS to confirm proper functionality.

5. Applications:

   • Suitable for high-frequency switching applications due to low gate charge and fast switching times.
   • Ideal for use in motor drives, power supplies, and other high-power electronics.

(For reference only)