Details

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BUY IPP60R190C6 https://www.utsource.net/itm/p/6784816.html

Parameter	Symbol	Value	Unit	Conditions/Notes
Maximum Drain Current	ID	60	A	TC = 25°C, Pulse Width ≤ 300 μs, Duty Cycle = 1/100
Maximum Gate-to-Source Voltage	VGS	±20	V
Maximum Drain-to-Source Voltage	VDS	650	V
Maximum Power Dissipation	PD	190	W	TC = 25°C
Junction Temperature	TJ	-55 to 175	°C
Storage Temperature Range	TSTG	-55 to 175	°C
Thermal Resistance (Junction to Case)	RθJC	0.45	°C/W	TC = 25°C
Continuous Drain Current	ID @ TJ=100°C	48	A	TC = 25°C
On-State Resistance at 25°C	RDS(on)	190	mΩ	VGS = 10V, ID = 20A
On-State Resistance at 100°C	RDS(on)	270	mΩ	VGS = 10V, ID = 20A
Input Capacitance	Ciss	4200	pF	VDS = 30V, f = 1 MHz
Output Capacitance	Coss	120	pF	VDS = 30V, f = 1 MHz
Reverse Transfer Capacitance	Crss	90	pF	VDS = 30V, f = 1 MHz

Instructions:

1. Handling and Storage: Store in a dry place within the specified storage temperature range (-55°C to 175°C). Avoid exposure to high humidity.
2. Mounting: Ensure proper thermal management by using heat sinks or heatsink compounds to maintain junction temperatures within operational limits.
3. Electrical Connections: Verify that gate drive circuits provide adequate voltage levels to ensure full turn-on of the MOSFET. Use short leads for gate connections to minimize parasitic inductances.
4. Overcurrent Protection: Implement overcurrent protection mechanisms to prevent damage from excessive drain currents.
5. Heat Dissipation: Given the power dissipation capability, ensure adequate ventilation or cooling solutions are in place, especially during continuous operation near maximum current ratings.
6. Pulse Operation: For pulse applications, verify that pulse width and duty cycle do not exceed the rated values to avoid overheating.
7. Safety Precautions: Always handle the device with care to avoid electrostatic discharge (ESD), which can damage the MOSFET. Use ESD-safe equipment and practices.

(For reference only)