Details

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BUY STW11NM80 https://www.utsource.net/itm/p/6785118.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Breakdown Voltage	V(BR)DSS	-	80	-	V	@ ID = 250 μA, Tj = 25°C
Drain-Source On-Resistance	RDS(on)	1.2	-	1.6	Ω	@ VGS = 10V, ID = 4.5A, Tj = 25°C
Gate Threshold Voltage	VGS(th)	1.5	2.5	3.5	V	@ ID = 250 μA, Tj = 25°C
Input Capacitance	Ciss	-	970	-	pF	@ VDS = 20V, f = 1 MHz
Total Power Dissipation	PD	-	-	1.1	W	@ TC = 25°C
Junction Temperature	TJ	-25	-	175	°C	Operating Range

Instructions for Use:

1. Handling Precautions: The STW11NM80 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD precautions.
2. Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation limits.
3. Voltage Ratings: Do not exceed the breakdown voltage (V(BR)DSS) of 80V to avoid damage.
4. Operating Temperature: Operate within the specified junction temperature range (-25°C to 175°C).
5. Gate Drive: Ensure the gate drive voltage (VGS) is sufficient to fully turn on the MOSFET, typically between 10V and 20V for optimal performance.
6. Storage: Store in original packaging in a dry environment away from direct sunlight.

For detailed specifications and application notes, refer to the official datasheet provided by STMicroelectronics.

(For reference only)