Details

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BUY IPW60R125CP https://www.utsource.net/itm/p/6785125.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
On-State Resistance	RDS(on)	-	60	-	mΩ	Drain-source on-state resistance at ID=12.5A, VGS=10V
Continuous Drain Current	ID	-	-	125	A	Continuous drain current at Tc=25°C
Pulse Drain Current	Ipp	-	-	400	A	Pulse drain current (t=10ms, Duty=1%)
Gate Charge	Qg	-	98	-	nC	Total gate charge at VGS=10V
Input Capacitance	Ciss	-	3500	-	pF	Input capacitance at VDS=500V
Output Capacitance	Coff	-	750	-	pF	Output capacitance at VDS=500V
Reverse Transfer Capacitance	Crss	-	2750	-	pF	Reverse transfer capacitance at VDS=500V
Power Dissipation	PD	-	-	180	W	Maximum power dissipation at Tc=25°C
Junction Temperature	Tj	-	-	175	°C	Maximum junction temperature

Instructions for Use:

1. Mounting and Heat Sinking:

   • Ensure adequate heat sinking to manage the maximum power dissipation of 180W.
   • Keep the junction temperature within the specified limit of 175°C.

2. Gate Drive Requirements:

   • Apply a gate voltage (VGS) of at least 10V to fully turn on the device and achieve the rated on-state resistance.
   • Be mindful of the total gate charge (Qg) when designing the gate drive circuitry to ensure reliable switching.

3. Current Handling:

   • Do not exceed the continuous drain current (ID) of 125A or the pulse drain current (Ipp) of 400A for short durations.
   • For applications requiring higher currents, consider parallel operation with appropriate current sharing techniques.

4. Capacitance Considerations:

   • Take into account the input (Ciss), output (Coff), and reverse transfer (Crss) capacitances in high-frequency switching applications to minimize switching losses.

5. Storage and Handling:

   • Store in a dry environment and handle with care to prevent damage to the device.
   • Follow anti-static precautions to avoid damaging the sensitive components.

6. Testing and Verification:

   • Verify all parameters under actual operating conditions as datasheet values are typically given under specific test conditions.
   • Perform thermal testing to ensure that the device does not exceed its maximum junction temperature during operation.

(For reference only)