Details

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BUY 2SC3997 https://www.utsource.net/itm/p/6785180.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	90	V
Emitter-Base Voltage	VEBO	-	-1.5	-5	V
Collector Current	IC	-	-	3	A
DC Current Gain	hFE	20	200	600		IC = 150mA
Transition Frequency	fT	-	400	-	MHz	IC = 10mA
Storage Temperature	Tstg	-55	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • The 2SC3997 is sensitive to electrostatic discharge (ESD). Use appropriate handling procedures such as anti-static wrist straps and packaging.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation limits.
   • Follow recommended soldering temperatures and times to avoid damage.

3. Biasing:

   • Operate within the specified voltage and current ratings to ensure reliable operation.
   • For optimal performance, bias the transistor according to the typical hFE values provided.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to protect against ESD.

5. Testing:

   • When testing or measuring parameters, ensure that conditions match those specified in the parameter table for accurate results.

(For reference only)