Details

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BUY IXFK64N60P https://www.utsource.net/itm/p/6785243.html

Parameter	Symbol	Value	Unit	Notes
Maximum Drain Voltage	VDSS	600	V
Maximum Gate-Source Voltage	VGS	±20	V
Maximum Drain Current (Tc=25°C)	ID	64	A	Pulse width ≤ 300μs
Maximum Power Dissipation	PD	187.5	W	Tc = 25°C
Junction Temperature Range	TJ	-55 to +175	°C
Storage Temperature Range	TSTG	-55 to +150	°C
Total Device Dissipation	PTOT	200	W	TC = 25°C, pulse
Gate Charge	QG	97	nC	VGS = 15V
Input Capacitance	Ciss	4720	pF	VDS = 0V, f = 1MHz
Output Capacitance	Coff	308	pF	VGS = 0V, f = 1MHz
Reverse Transfer Capacitance	Crss	1290	pF	VDS = 300V, f = 1MHz
Threshold Voltage	VGS(th)	2.0 to 4.0	V	ID = 250μA, Tj = 25°C
On-State Resistance	RDS(on)	0.085	Ω	VGS = 10V, ID = 64A

Instructions for Use:

1. Handling Precautions: The IXFK64N60P is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Operating Conditions: Ensure that the operating conditions do not exceed the maximum ratings provided in the table.
3. Heat Sinking: For continuous operation at high current or power levels, ensure adequate heat sinking to maintain junction temperature within specified limits.
4. Gate Drive Requirements: The gate drive voltage should be kept within the recommended range to avoid damage to the device and ensure optimal performance.
5. Storage and Transportation: Store the device in a dry environment within the specified storage temperature range to prevent damage.
6. Mounting Orientation: Pay attention to the mounting orientation to ensure proper electrical connections and thermal management.
7. Pulse Width Considerations: When operating in pulse mode, ensure that the pulse width does not exceed the specified limit to avoid exceeding safe operating area (SOA) limits.

(For reference only)