Details

---

BUY KHB7D0N80F1 https://www.utsource.net/itm/p/6793081.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	80	-	mΩ @ 25°C, VGS=10V	Resistance when the device is fully on.
Breakdown Voltage	BVdss	-	800	-	V	Maximum voltage that can be applied between drain and source.
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	Voltage at which the device starts to conduct.
Continuous Drain Current	ID	-	7	-	A @ 25°C	Maximum continuous current through the drain.
Total Power Dissipation	PD	-	3.2	-	W @ 25°C	Maximum power dissipation at ambient temperature.
Junction Temperature	TJ	-	-	175	°C	Maximum operating junction temperature.
Storage Temperature	Tstg	-55	-	150	°C	Temperature range for storage.

Instructions:

1. Mounting: Ensure proper heat sinking for efficient heat dissipation, especially if operating near maximum power dissipation.
2. Voltage Handling: Do not exceed the breakdown voltage (BVdss) to prevent damage to the device.
3. Current Limitation: Keep the drain current within the continuous drain current limits to avoid overheating.
4. Temperature Monitoring: Operate within specified junction temperature limits to ensure reliability and longevity.
5. Gate Drive: Apply gate voltages within the threshold voltage range to ensure reliable switching.
6. Storage Conditions: Store in environments within the specified storage temperature range to maintain performance integrity.

(For reference only)