Details

---

BUY IRF9Z34NPBF https://www.utsource.net/itm/p/6793140.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On Resistance	Rds(on)	Vgs = -10V, Id = -8A		0.24	0.36	Ω
Gate-Source Threshold Voltage	Vgs(th)	Id = -1mA	-4.0	-3.5	-2.5	V
Continuous Drain Current	Id	Tc = 25°C			-9.0	A
Pulse Drain Current	Idp	Pulse width ≤ 300μs, Duty cycle ≤ 2%			-53	A
Power Dissipation	Ptot	Ta = 25°C			76	W
Junction Temperature	Tj		-55		150	°C
Storage Temperature	Tstg		-55		150	°C

Instructions for IRF9Z34NPBF:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
2. Mounting: Ensure that the thermal resistance from the junction to ambient is minimized by using adequate heatsinking if necessary.
3. Operating Voltage: Do not exceed the maximum ratings specified in the table to avoid damage to the device.
4. Gate Drive: Apply a gate-source voltage (Vgs) within the recommended range to ensure reliable operation and prevent damage.
5. Thermal Considerations: Monitor the junction temperature to stay within safe operating limits. Exceeding the maximum junction temperature can lead to premature failure.
6. Pulse Operation: When operating in pulse mode, adhere to the specified pulse width and duty cycle limits to prevent overheating.
7. Storage: Store in a dry environment within the specified storage temperature range to maintain device integrity.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)