Details

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BUY STP4NK60Z https://www.utsource.net/itm/p/6793206.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-source on-resistance	RDS(on)	VGS = 10V, ID = 4A	-	60	-	mΩ
Gate-source threshold voltage	VGS(th)	ID = 250μA	2.0	-	4.0	V
Continuous drain current	ID	TC = 25°C	-	-	4	A
Power dissipation	PD	TC = 25°C	-	-	390	mW
Junction temperature	TJ	-	-20	-	175	°C
Storage temperature range	TSTG	-	-65	-	150	°C

Instructions for STP4NK60Z:

1. Handling and Storage:

   • Store the device in a dry environment to avoid moisture damage.
   • Handle with care to prevent electrostatic discharge (ESD) which can damage the MOSFET.

2. Mounting:

   • Ensure proper heat sinking if operating at high currents or power levels to maintain junction temperature within specified limits.
   • Use appropriate mounting hardware and thermal interface materials for efficient heat transfer.

3. Electrical Connections:

   • Verify that all connections are secure and correctly wired according to the circuit design.
   • Ensure gate drive signals do not exceed the maximum gate-source voltage ratings to prevent damage.

4. Operating Conditions:

   • Operate within the specified continuous drain current and power dissipation limits to ensure reliable operation.
   • Monitor the junction temperature during operation to avoid overheating.

5. Testing:

   • When testing the device, use the conditions specified in the parameter table to accurately measure performance characteristics.
   • Ensure test equipment is calibrated and capable of providing stable and accurate measurements.

(For reference only)