Details

---

BUY FQPF10N20C https://www.utsource.net/itm/p/6793276.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	V(DS)			200	V	Maximum drain-to-source voltage
Gate-Source Voltage	V(GS)	-10		10	V	Maximum gate-to-source voltage
Continuous Drain Current	I(D)		10		A	Continuous drain current at Tc=25°C
Pulse Drain Current	I(D pul)		35		A	Pulse drain current
Power Dissipation	P(TOT)			8.3	W	Total power dissipation
Junction Temperature	T(j)	-55		150	°C	Operating junction temperature
Storage Temperature	T(stg)	-55		150	°C	Storage temperature range

Instructions:

1. Installation: Ensure that the device is mounted on a suitable heatsink to dissipate heat effectively, especially under continuous operation.
2. Handling: Use proper anti-static precautions when handling the FQPF10N20C to prevent damage from electrostatic discharge (ESD).
3. Biasing: Apply gate voltages within the specified limits to avoid damaging the gate oxide layer.
4. Current Limiting: Do not exceed the maximum continuous or pulse drain current ratings to prevent overheating and potential failure.
5. Temperature Monitoring: Keep the junction temperature within the specified operating range. Monitor the temperature if operating in high ambient temperatures or with high power dissipation.
6. Pulse Operation: For pulse applications, ensure that the pulse width and frequency do not cause the average power dissipation to exceed the rated value.
7. Storage: Store the device in a dry, cool environment within the specified storage temperature range to maintain its integrity.

For detailed application notes and further information, refer to the manufacturer's datasheet.

(For reference only)