Details

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BUY STP4NK60ZFP https://www.utsource.net/itm/p/6793283.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 4A		60		mΩ
Gate Threshold Voltage	VGS(th)	ID = 1mA	2.0		4.0	V
Continuous Drain Current	ID	TC = 25°C		4		A
Pulse Drain Current	IDM	tp = 10ms, TC = 25°C		20		A
Drain-Source Breakdown Voltage	BVDS	IG = 250μA	600			V
Gate-Source Voltage	VGS		-20		20	V
Total Power Dissipation	PD	TC = 25°C			370	mW
Junction Temperature	TJ		-55		150	°C
Storage Temperature Range	TSTG		-55		150	°C

Instructions for STP4NK60ZFP:

1. Handling and Storage:

   • Store in a dry environment to avoid moisture damage.
   • Handle with care to prevent static damage; use appropriate ESD protection.

2. Mounting and PCB Layout:

   • Ensure adequate heat dissipation if operating near maximum current or power levels.
   • Place the device away from sources of electromagnetic interference (EMI).

3. Electrical Connections:

   • Verify that the gate-source voltage does not exceed the specified limits to prevent damage.
   • Use short leads for high-frequency applications to minimize inductance.

4. Operation:

   • Operate within the specified temperature range to ensure reliable performance.
   • Monitor junction temperature to avoid overheating, especially during continuous operation at high currents.

5. Testing:

   • When testing, ensure all parameters are within the specified test conditions to accurately measure device performance.
   • Use proper safety precautions when testing at high voltages or currents.

For detailed application notes and further technical support, refer to the official STMicroelectronics documentation or contact their customer service.

(For reference only)