MBR20100CTF-E1

MBR20100CTF-E1

Category: Transistors

Specifications
SKU
6793647
Details

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Parameter Symbol Conditions Min Typ Max Unit
Average Rectified Current IF(AV) Tj = 25°C - 20 - A
Peak Forward Surge Current IFSM t = 8.3ms, sinewave - 100 - A
Forward Voltage Drop VF IF = 20A, Tj = 25°C - 1.0 - V
Reverse Recovery Time trr IF = 20A, di/dt = 200A/μs - 47 - ns
Junction Capacitance Cj VR = 0V, f = 1MHz - 60 - pF
Operating Junction Temperature Tj - -55 - 175 °C

Instructions for Use:

  1. Mounting and Handling: Handle with care to avoid damage to the leads and body. Ensure proper alignment during mounting to prevent mechanical stress.
  2. Thermal Considerations: Ensure adequate heat sinking if operating near maximum current ratings to maintain junction temperature within specified limits.
  3. Surge Current Handling: The device can handle peak forward surge currents up to 100A for short durations (8.3ms sinewave). Ensure that transient conditions do not exceed these values.
  4. Reverse Recovery: Be aware of the reverse recovery time when using this diode in high-frequency applications to avoid potential issues with switching losses.
  5. Storage and Packaging: Store in a dry environment and follow recommended storage practices to prevent moisture damage.
  6. Electrostatic Discharge (ESD) Protection: Handle with appropriate ESD precautions to prevent damage from static electricity.

For detailed specifications and more specific application notes, refer to the manufacturer's datasheet or technical documentation.

(For reference only)

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