Details

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BUY MDF7N60BTH https://www.utsource.net/itm/p/6793824.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V_DS	-60		60	V
Gate-Source Voltage	V_GS	-20		20	V
Continuous Drain Current	I_D		7		A	T_C = 25°C, R_th = 3°C/W
Pulse Drain Current	I_DS(p)		14		A	t_p = 10 μs, I_G = 1 A
Power Dissipation	P_TOT			9.8	W	T_C = 25°C
Junction Temperature	T_J	-55		150	°C
Storage Temperature	T_STG	-55		150	°C
Total Gate Charge	Q_G		30		nC	V_DS = 400 V, I_D = 7 A
Input Capacitance	Ciss		1300		pF	V_DS = 0 V, f = 1 MHz
Output Capacitance	Coss		250		pF	V_DS = 400 V, f = 1 MHz
Reverse Transfer Capacitance	Crss		110		pF	V_DS = 400 V, f = 1 MHz

Instructions for Use:

1. Handling Precautions:

   • The MDF7N60BTH is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling.

2. Mounting:

   • Ensure adequate heat sinking if operating near the maximum current or power dissipation limits.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure that the junction temperature remains within specified limits during operation.

4. Driving the Gate:

   • Use a gate driver capable of providing sufficient current to charge and discharge the gate capacitance quickly for optimal switching performance.

5. Storage:

   • Store in a dry environment within the storage temperature range to prevent damage.

6. Testing:

   • When testing, ensure all parameters are within the typical operating conditions to avoid stressing the device beyond its limits.

(For reference only)