Details

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BUY T107BL https://www.utsource.net/itm/p/6804999.html

Parameter	Description
Part Number	T107BL
Type	Bipolar Junction Transistor (BJT)
Polarity	NPN
Collector-Emitter Voltage (VCEO)	80 V
Emitter-Base Voltage (VEBO)	5 V
Collector Current (IC)	1.5 A
Power Dissipation (PD)	625 mW at TA = 25°C
DC Current Gain (hFE)	Min: 100, Max: 300 at IC = 150 mA, VCE = 10 V
Transition Frequency (ft)	300 MHz
Storage Temperature Range (TSTG)	-55°C to +150°C
Operating Temperature Range (TA)	-55°C to +150°C
Package Type	SOT-23

Instructions for Use:

1. Handling Precautions: Handle with care to avoid damage to the leads and body. Follow ESD (Electrostatic Discharge) precautions.
2. Mounting: Ensure proper orientation during mounting. Refer to the datasheet for pin configuration.
3. Soldering: Use appropriate soldering temperature not exceeding 260°C for a maximum of 10 seconds per joint.
4. Heat Sink: For applications requiring higher current or power dissipation, consider using a heat sink.
5. Biasing: Ensure correct biasing conditions to operate within specified limits to prevent damage or overheating.
6. Testing: Verify all connections and parameters post-assembly. Test under controlled conditions before full-scale deployment.

(For reference only)