Details

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BUY MT41K128M16JT-125:K https://www.utsource.net/itm/p/6885467.html

Parameter	Description	Value
Device Type	High-density, high-speed DDR3 SDRAM	MT41K128M16JT-125:K
Organization	Organization	1Gb x 16
Supply Voltage (Vdd)	Operating supply voltage	1.35V ± 0.075V
Supply Voltage (Vddq)	I/O supply voltage	1.35V ± 0.075V
Clock Frequency	Maximum clock frequency	800 MHz
Data Rate	Data rate	1600 Mbps
CAS Latency	CAS latency settings	11
Operating Temperature	Operating temperature range	-40°C to +85°C
Package Type	Package	FBGA
Ball Grid Array Size	Ball grid array size	9x13
Ball Pitch	Ball pitch	0.8 mm
Thermal Resistance	Junction-to-ambient thermal resistance	35.6°C/W

Instructions:

1. Power Supply Requirements: Ensure that both Vdd and Vddq are supplied with a stable 1.35V ± 0.075V.
2. Clock Signal: Provide a clean, stable clock signal at the specified maximum frequency of 800 MHz for optimal performance.
3. Initialization: Follow the JEDEC standard DDR3 initialization sequence to ensure proper operation.
4. Temperature Management: Operate within the specified temperature range (-40°C to +85°C) and consider thermal management solutions if operating near the upper limit.
5. Signal Integrity: Maintain good signal integrity on all control and data lines, especially at higher data rates.
6. Mounting: Use appropriate mounting techniques for the FBGA package, ensuring all connections are secure and reliable.
7. Storage: Store in a dry environment and handle with ESD precautions to avoid damage.

For detailed specifications and advanced usage, refer to the manufacturer's datasheet or technical documentation.

(For reference only)