Details

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BUY 2SC5027-R https://www.utsource.net/itm/p/6885602.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V	IC = 150mA, Tc = 25°C
Emitter-Base Voltage	VEBO	-5	-	5	V	IC = 0mA, Tc = 25°C
Collector Current	IC	-	150	-	mA	VCE = 30V, Tc = 25°C
Power Dissipation	PD	-	-	625	mW	Tc = 25°C
Forward Current Transfer Ratio	hFE	40	100	300	-	IC = 10mA, VCE = 5V
Transition Frequency	fT	-	-	300	MHz	IC = 10mA, VCE = 5V
Storage Temperature Range	Tstg	-55	-	150	°C	-
Operating Junction Temperature	TJ	-10	-	150	°C	-

Instructions for Use:

1. Mounting and Handling: Ensure the device is handled with care to avoid mechanical damage. Proper mounting techniques should be used to ensure thermal stability.
2. Electrical Connections: Connect the emitter, base, and collector terminals correctly according to your circuit design. Incorrect connections can lead to malfunction or damage.
3. Operating Conditions: Operate within specified voltage and current limits to prevent overheating and potential failure. Monitor junction temperature especially under continuous operation.
4. Power Dissipation Management: Keep power dissipation within rated limits by ensuring adequate heat sinking if necessary. Excessive power dissipation can reduce component life and reliability.
5. Storage and Environment: Store in a dry, cool place away from direct sunlight. Avoid exposing the device to corrosive environments or extreme temperatures outside the storage range.
6. Testing and Verification: Before final assembly, test the transistor parameters to ensure they meet the required specifications. Regular testing can help maintain performance standards.

(For reference only)