Details

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BUY P3004ND5G https://www.utsource.net/itm/p/6885659.html

Parameter	Description
Part Number	P3004ND5G
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel Enhancement Mode
Vds (Drain-Source Voltage)	±60V (Absolute Maximum Rating)
Id (Continuous Drain Current)	12A at Ta=25°C, 8.4A at Ta=70°C (Continuous Operating Region)
Rds(on) (On-Resistance)	4.9mΩ at Vgs=10V, 25°C
Vgs(th) (Gate Threshold Voltage)	2.0V to 4.0V (Typical @ Id=250μA)
Power Dissipation (Pd)	37W at Tc=25°C
Operating Temperature Range	-55°C to +175°C
Package Type	TO-220AB
Mounting Type	Through Hole

Instructions for Use:

1. Handling Precautions: The P3004ND5G is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Heat Sinking: For applications where the device will operate near its maximum current ratings, ensure adequate heat sinking to maintain junction temperature within safe limits.
3. Voltage and Current Limits: Do not exceed the absolute maximum ratings specified in the parameter table. Continuous operation should be within the continuous operating region.
4. Gate Drive Requirements: Ensure that the gate voltage is within the recommended range to avoid damage or unreliable operation. A gate resistor may be necessary to limit current spikes during switching.
5. Storage Conditions: Store in a dry, cool place away from direct sunlight and sources of heat. Follow manufacturer guidelines for long-term storage.
6. Soldering: Use proper soldering techniques and temperatures to prevent thermal shock and damage to the component. Avoid excessive heating during soldering.

For detailed application notes and further information, refer to the manufacturer's datasheet.

(For reference only)