Details

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BUY RA07M1317M https://www.utsource.net/itm/p/6921469.html

Parameter	Description
Part Number	RA07M1317M
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
VDS (V)	700
RDS(on) (Ω)	0.17 at VGS=10V, ID=2A
VGS(th) (V)	2.5 to 4.5
ID (A)	7
Package	TO-220
Operating Temp	-55°C to +150°C
Mounting Style	Through Hole

Instructions for Use:

1. Handling Precautions: The RA07M1317M is an electrostatic sensitive device (ESD). Handle with care and use appropriate ESD precautions.
2. Storage Conditions: Store in a dry environment away from direct sunlight and high temperatures.
3. Installation: Ensure correct orientation during installation. Follow the pin configuration diagram provided in the datasheet.
4. Heat Sinking: For applications where the MOSFET may operate at higher currents or temperatures, consider using a heat sink to maintain optimal performance and longevity.
5. Circuit Design: Ensure that the gate drive voltage is within the specified limits to prevent damage to the device.
6. Testing: Before final assembly, test the device parameters to ensure they meet the specifications provided.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)