Details

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Parameter	Description
Part Number	MHW1815
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel Enhancement Mode
VDS (Max)	80V - Maximum Drain-to-Source Voltage
RDS(on)	4.2 mΩ @ VGS=10V - On-State Resistance
ID (Max)	90A - Continuous Drain Current at Tc = 25°C
PD (Max)	23W - Total Power Dissipation at Tc = 25°C
Package	TO-220AB
**Operating Temp.	-55°C to +175°C

Instructions for Use:

1. Mounting: Ensure the MOSFET is mounted on a heatsink if operating near maximum current or power levels to maintain optimal temperature.
2. Handling: Handle with care to avoid damage to the leads and body. Use appropriate ESD (Electrostatic Discharge) precautions.
3. Soldering: Solder within recommended temperatures and times to prevent thermal damage. Typically, soldering should not exceed 260°C for more than 10 seconds.
4. Circuit Design: Ensure that the gate voltage does not exceed the maximum rated value to prevent damage. The gate threshold voltage can vary; refer to the datasheet for specific device characteristics.
5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)