Details

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BUY FDD2582 https://www.utsource.net/itm/p/6939930.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Supply Voltage	VDD	1.6	-	5.5	V
Gate-Source Voltage	VGS(th)	-	0.8	2.0	V	ID = 250 μA
Continuous Drain Current	ID	-	3.0	4.5	A	VGS = 4.5V, Ta = 25°C
RDS(on)	RDS(on)	-	45	70	mΩ	VGS = 4.5V, ID = 3.0A, Ta = 25°C
Total Power Dissipation	PD	-	-	0.9	W	Ta = 25°C
Junction Temperature	TJ	-	-	150	°C
Storage Temperature	TSTG	-65	-	150	°C

Instructions for Use:

1. Supply Voltage (VDD): Ensure the supply voltage is within the range of 1.6V to 5.5V to avoid damaging the device.
2. Gate-Source Voltage (VGS(th)): The threshold voltage where the transistor begins to conduct should be considered when designing the gate drive circuit.
3. Continuous Drain Current (ID): Operate within the specified current limits to prevent overheating and potential failure.
4. On-State Resistance (RDS(on)): This parameter affects power dissipation; ensure it aligns with your application's requirements for efficiency.
5. Power Dissipation (PD): Keep total power dissipation below the maximum rating to maintain reliable operation.
6. Junction Temperature (TJ): Monitor junction temperature to stay within safe operating limits, especially under high load conditions.
7. Storage Temperature (TSTG): Store the device in environments that do not exceed the specified storage temperature range to prevent damage.

For detailed specifications and additional information, refer to the official datasheet provided by the manufacturer.

(For reference only)