Details

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BUY JS28F256M29EWL https://www.utsource.net/itm/p/6942354.html

Parameter	Description
Device Type	256M-Bit (32M x 8) Serial Flash Memory
Package	WSON-8 (6x5 mm)
Operating Voltage (Vcc)	2.7V to 3.6V
Temperature Range	-40°C to +85°C
Data Retention	20 years at 85°C
Endurance	100,000 Program/Erase Cycles
Interface	SPI (Serial Peripheral Interface)
Clock Frequency	Up to 80 MHz
Memory Organization	32M x 8
Page Size	256 Bytes
Sector Size	4K Bytes
Block Size	64K Bytes
Program Time	Up to 3ms for 256-byte page
Erase Time	Up to 30ms for 4K sector, up to 200ms for 64K block
Write Protection	Software and Hardware protection
Features	Quad I/O SPI, Dual I/O SPI, High-Speed Read, Deep Power-down Mode

Instructions:

1. Power Supply Requirements: Ensure the device is powered within the specified operating voltage range of 2.7V to 3.6V.
2. Initialization: After power-up or reset, initialize the device by sending the appropriate commands via the SPI interface.
3. Reading Data: Use the Read command to access data from the memory. The address must be provided as part of the command sequence.
4. Writing Data: Before writing, ensure the write enable latch is set using the Write Enable command. Data can be programmed in pages of 256 bytes.
5. Erasing Data: Erase operations can be performed on sectors (4K bytes) or blocks (64K bytes). Use the Sector Erase or Block Erase commands accordingly.
6. Write Protection: To prevent accidental writes, configure the write protection settings using the Status Register Write Protect bit or hardware pin.
7. Power Management: Utilize the Deep Power-down Mode to reduce power consumption when the device is idle.
8. Error Handling: Monitor the status register for any errors during read, write, or erase operations.

For detailed command sequences and timing diagrams, refer to the datasheet provided by the manufacturer.

(For reference only)