Details

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BUY FQU4N60C https://www.utsource.net/itm/p/6972403.html
FQU4N60C 4N60 TO-251 The field effect tube NMOS 4A 600V Factory direct sale

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS			600	V
Gate-Source Voltage	VGS	-15		15	V
Continuous Drain Current	ID		4.2		A	TC = 25°C
Pulse Drain Current	Ipp		18		A	tP = 10 μs, TC = 25°C
Gate Charge	QG		23		nC	VGS = 10V
Input Capacitance	Ciss		1600		pF	VDS = 20V, f = 1 MHz
Output Capacitance	Coss		350		pF	VDS = 20V, f = 1 MHz
Reverse Transfer Capacitance	Crss		450		pF	VDS = 20V, f = 1 MHz
Total Gate Charge	QG		23		nC	VGS = 10V
Threshold Voltage	VGS(th)	2.0	3.0	4.0	V	ID = 250 μA
On-State Resistance	RDS(on)		0.52		Ω	VGS = 10V, ID = 4.2A

Instructions for Use:

1. Mounting and Handling:

   • Handle the FQU4N60C with care to avoid damage to the pins or body.
   • Ensure proper heat sinking if operating at high currents to maintain junction temperature within limits.

2. Electrical Connections:

   • Connect the drain (D) to the high voltage side of your circuit.
   • Connect the source (S) to the low voltage side or load.
   • Apply gate (G) signals carefully; ensure that the gate-source voltage does not exceed the maximum rating.

3. Operating Temperature:

   • Ensure that the ambient temperature does not exceed the specified operational range.
   • Monitor the junction temperature to prevent overheating.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to protect against electrostatic discharge (ESD).

5. Testing:

   • When testing, follow the conditions specified in the parameter table for accurate results.
   • Use appropriate safety measures when handling high voltages and currents.

6. Safety Precautions:

   • Always disconnect power before making any adjustments or measurements.
   • Use protective equipment such as gloves and safety glasses when working with electrical components.

(For reference only)