Details

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BUY H5TQ4G63AFR-PBC https://www.utsource.net/itm/p/6984265.html

Parameter	Description	Value
Device Type	NAND Flash Memory
Manufacturer	Hynix Semiconductor
Part Number	H5TQ4G63AFR-PBC
Density	Storage Capacity	4 Gb (512Mb x8)
Interface	I/O Standard	Toggle Mode DDR Interface
Vcc Supply Voltage	Operating Supply Voltage	1.8V ± 0.1V
VccI Supply Voltage	Input Buffer Supply Voltage	1.8V ± 0.1V
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Package Type	Package Style	BGA (Ball Grid Array)
Pin Count	Number of Pins	86
Clock Frequency	Maximum Clock Speed	200 MHz
Access Time	Page Read Access Time	35 ns
ECC Requirement	Error Correction Code	40-bit ECC for every 2048-byte page
Endurance	Program/Erase Cycles	100,000 cycles
Data Retention	Data Retention at 25°C	10 years

Instructions for Use:

1. Power Supply Connection: Ensure that the Vcc and VccI supply voltages are correctly connected and maintained within the specified range of 1.8V ± 0.1V.
2. Initialization Sequence: Follow the device-specific initialization sequence as detailed in the datasheet to configure the memory properly before any read/write operations.
3. Clock Configuration: Configure the clock settings to match the maximum clock frequency of 200 MHz for optimal performance.
4. Command Protocol: Use the command protocol specified for Toggle Mode DDR interface to execute read, write, and erase commands.
5. Error Correction: Implement a 40-bit ECC mechanism for every 2048-byte page to ensure data integrity during read/write operations.
6. Temperature Monitoring: Operate the device within the industrial temperature range (-40°C to +85°C) to avoid damage or data corruption.
7. Handling Precautions: Handle the BGA package with care to prevent damage to the balls and ensure proper seating on the PCB during installation.

For more detailed information, refer to the specific datasheet provided by Hynix Semiconductor for the H5TQ4G63AFR-PBC.

(For reference only)