H27U1G8F2CTR-BC

H27U1G8F2CTR-BC


Specifications
SKU
6993880
Details

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Parameter Description
Product Name H27U1G8F2CTR-BC
Manufacturer Hynix Semiconductor Inc.
Type SDRAM
Density 1 Gb (128Mb x 8)
Organization 16M x 64 x 4 banks
Voltage Supply Vdd = 2.5V ± 0.1V, Vddq = 2.5V ± 0.1V
Operating Temperature Range -40°C to +85°C
Package Type BGA (Ball Grid Array)
Pin Count 60
CAS Latency CL=2
Access Time tRCD = 20 ns, tRP = 20 ns
Cycle Time tRC = 45 ns
Refresh Rate 8K refresh cycles per 64ms

Instructions for Use:

  1. Power Supply Requirements: Ensure that the power supply voltage (Vdd and Vddq) is set to 2.5V ± 0.1V.
  2. Temperature Considerations: The device operates reliably within a temperature range of -40°C to +85°C.
  3. Installation: Install in a standard BGA socket or directly solder onto the PCB as per the manufacturer’s guidelines.
  4. Initialization: Upon powering up, initialize the SDRAM with the appropriate command sequence according to the JEDEC standard.
  5. Refresh Commands: Issue refresh commands every 64ms to maintain data integrity.
  6. Timing Parameters: Adhere strictly to the specified timing parameters (tRCD, tRP, tRC) to ensure reliable operation.
  7. Signal Integrity: Pay attention to signal integrity by using proper PCB layout techniques, especially for high-speed signals.
  8. Handling Precautions: Handle the component with care to avoid damage from electrostatic discharge (ESD).
(For reference only)

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