Details

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BUY FF150R12KE3G https://www.utsource.net/itm/p/6994264.html
62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode

Parameter	Symbol	Min	Typ	Max	Unit	Description
Rated Collector Current	IC	-	150	-	A	Continuous collector current at Tc = 25°C
Collector-Emitter Voltage	VCES	-	1200	-	V	Maximum collector-emitter voltage
Gate-Emitter Voltage	VGE	-	±20	-	V	Maximum gate-emitter voltage
Power Dissipation	Ptot	-	400	-	W	Total power dissipation
Junction Temperature	Tj	-20	-	175	°C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	150	°C	Storage temperature range
Thermal Resistance	Rth(j-c)	-	0.5	-	K/W	Junction to case thermal resistance

Instructions for FF150R12KE3G:

1. Installation:

   • Ensure that the device is mounted on a suitable heatsink to maintain proper operating temperatures.
   • Follow recommended PCB layout guidelines for optimal performance and reliability.

2. Handling:

   • Use appropriate ESD protection measures during handling and installation.
   • Avoid mechanical stress on the leads and body of the device.

3. Operation:

   • Do not exceed the maximum ratings provided in the parameter table.
   • Ensure that the gate drive circuitry provides the correct voltage levels as specified.
   • Operate within the specified temperature ranges to prevent damage or reduced performance.

4. Testing:

   • Use caution when testing devices at high voltages; ensure all safety precautions are followed.
   • Verify that the device operates correctly under typical operating conditions before deployment in final applications.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)