Details

---

BUY FP50R12KT4G https://www.utsource.net/itm/p/6994432.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V CES				1200	V
Emitter-Collector Voltage	V ECS				1200	V
Gate-Emitter Voltage	V GES		-15		15	V
Continuous Collector Current	I C	Tc = 25°C		50		A
Pulse Collector Current	I CM	tp = 10 ms, Tc = 25°C		100		A
Power Dissipation	P T	Tc = 25°C			750	W
Junction Temperature	T j		-55		175	°C
Storage Temperature	T stg		-55		150	°C

Instructions for FP50R12KT4G:

1. Handling and Storage:

   • Store in a dry environment away from direct sunlight.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use appropriate torque when mounting screws to prevent damage.

3. Electrical Connections:

   • Verify all connections are secure and correctly wired according to the circuit diagram.
   • Ensure gate drive circuits provide adequate voltage levels to switch the transistor fully on or off.

4. Operation:

   • Operate within the specified temperature and voltage ranges to ensure reliable performance.
   • Monitor current levels to avoid exceeding the maximum continuous collector current.

5. Testing:

   • Perform initial testing at lower power levels to verify correct operation before full load tests.
   • Regularly inspect for signs of overheating or abnormal behavior during operation.

(For reference only)