Details

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BUY CM50MX-24A https://www.utsource.net/itm/p/6994456.html

Parameter	Description	Value
Part Number	Full part number	CM50MX-24A
Type	Type of device	MOSFET
Package	Package type	TO-220
VDS (Max Drain-Source Voltage)	Maximum voltage between drain and source	±50V
RDS(on) (On-Resistance)	On-resistance at specified conditions	24 mΩ @ VGS = 10V, ID = 25A
ID (Continuous Drain Current)	Continuous drain current at Tc=25°C	50A
Power Dissipation (PD)	Maximum power dissipation	125W @ TC = 25°C
Operating Temperature Range (TJ)	Junction temperature range	-55°C to +150°C
Gate Charge (Qg)	Total gate charge	78 nC
Input Capacitance (Ciss)	Input capacitance at VDS = 15V, VGS = 0V	1390 pF
Output Capacitance (Coss)	Output capacitance at VDS = 15V, VGS = 0V	265 pF
Reverse Transfer Capacitance (Crss)	Reverse transfer capacitance at VDS = 15V, VGS = 0V	155 pF

Instructions for Use:

1. Handling Precautions: The CM50MX-24A is sensitive to electrostatic discharge (ESD). Handle with care using appropriate ESD protection measures.
2. Mounting: Ensure proper mounting on a heatsink or PCB with adequate thermal management to handle the maximum power dissipation.
3. Voltage Limits: Do not exceed the maximum drain-source voltage (VDS) ratings to prevent device damage.
4. Current Ratings: Operate within the continuous drain current (ID) limits, considering the ambient temperature and heat dissipation.
5. Gate Drive: Apply sufficient gate voltage (VGS) to ensure low RDS(on) and efficient operation. Avoid exceeding the maximum VGS rating.
6. Thermal Management: Monitor the junction temperature (TJ) to stay within operational limits, especially under high-power conditions.
7. Storage: Store in a dry environment away from corrosive substances and extreme temperatures.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)