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HIGH POWER SWITCHING USE INSULATED TYPE
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Part Number | CM75DU-12H | ||
| Type | MOSFET | ||
| Configuration | Dual | ||
| Package | DPAK (TO-252) | ||
| VDS (Drain-Source Voltage) | Maximum voltage between drain and source | 75 | V |
| RDS(on) (On-Resistance) | Resistance when fully on | 12 | mΩ |
| ID (Continuous Drain Current) | Continuous current through the drain | 40 | A |
| Power Dissipation | Maximum power dissipation | 3.5 | W |
| Operating Junction Temperature | Temperature range for operation | -55 to +150 | °C |
| Gate Charge | Charge required to turn on the MOSFET | 9.6 | nC |
Instructions:
- Installation: Ensure the device is mounted on a suitable heat sink if operating near maximum power dissipation.
- Handling: Handle with care to avoid damage to the leads and body. Follow anti-static precautions to prevent damage to the MOSFET.
- Soldering: Use standard soldering techniques. Do not exceed temperatures that could affect the thermal characteristics of the device.
- Testing: When testing, ensure voltages do not exceed the VDS rating to prevent damage.
- Storage: Store in a dry environment away from direct sunlight and sources of heat.
For detailed application notes and more specific guidelines, refer to the manufacturer's datasheet or technical documentation.
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