Details

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BUY FZ800R33KF2C https://www.utsource.net/itm/p/6994830.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	V_B	-	1200	-	V	Maximum repetitive peak off-state voltage
On-State Voltage	V_CE(on)	-	2.5	-	V	Collector-emitter saturation voltage
Continuous Current	I_C	-	800	-	A	Continuous collector current
Pulse Current	I_CM	-	1600	-	A	Non-repetitive peak collector current
Junction Temperature	T_J	-25	-	150	°C	Operating junction temperature range
Storage Temperature	T_STG	-55	-	150	°C	Storage temperature range
Total Device Dissipation	P_TOT	-	4300	-	W	Total device dissipation
Gate Charge	Q_G	-	190	-	nC	Total gate charge

Instructions for FZ800R33KF2C

1. Installation and Mounting:

   • Ensure the device is mounted on a suitable heat sink to manage the heat dissipation effectively.
   • Follow mechanical installation guidelines to avoid mechanical stress which can affect performance and reliability.

2. Operating Conditions:

   • Do not exceed the maximum ratings provided in the table to prevent damage to the device.
   • Keep the junction temperature within the specified limits by proper thermal management.

3. Handling Precautions:

   • Handle with care to avoid damage to the pins and package.
   • Use appropriate ESD (Electrostatic Discharge) protection measures during handling and installation.

4. Testing:

   • Before installing into a circuit, verify the device parameters using standard test equipment.
   • Ensure that all connections are secure and correctly made according to the circuit diagram.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive substances.
   • Observe the storage temperature range to maintain device integrity.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)