Details

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BUY FDD5810 https://www.utsource.net/itm/p/7052693.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	0.012	-	Ω	At VGS = 10V, ID = 4A
Gate-Threshold Voltage	VGS(th)	1.5	2.5	3.5	V	Gate-source voltage for threshold
Continuous Drain Current	ID	-	4.7	-	A	At Ta = 25°C
Power Dissipation	PD	-	0.65	-	W	At Ta = 25°C
Total Device Dissipation	PTOT	-	1.1	-	W	At Ta = 25°C
Junction Temperature	TJ	-55	-	150	°C	Operating junction temperature range
Storage Temperature	TSTG	-55	-	150	°C	Storage temperature range

Instructions for FDD5810:

1. Handling Precautions:

   • The FDD5810 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.

2. Mounting Guidelines:

   • Ensure proper heat dissipation by mounting on a suitable heatsink if operating at high current or power levels.

3. Biasing:

   • For optimal performance, apply gate voltages within the specified range. Avoid exceeding the maximum ratings.

4. Operation Conditions:

   • Operate within the specified temperature ranges to ensure reliability and longevity of the device.

5. Testing:

   • When testing the device, adhere to the conditions outlined in the parameter table to avoid damage.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.

For detailed application circuits and more specific guidelines, refer to the datasheet provided by the manufacturer.

(For reference only)