Details
BUY G9117T63U https://www.utsource.net/itm/p/7054167.html
| Parameter | Value | Unit |
|---|---|---|
| Part Number | G9117T63U | - |
| Description | N-channel MOSFET | - |
| Drain Source Voltage (Vds) | 60 | V |
| Continuous Drain Current (Id) | 48 | A |
| Pulse Drain Current (Idm) | 120 | A |
| Gate Source Voltage (Vgs) | ±20 | V |
| Input Capacitance (Ciss) | 5750 | pF |
| Output Capacitance (Coss) | 1150 | pF |
| Reverse Transfer Capacitance (Crss) | 1150 | pF |
| RDS(on) at Vgs=10V | 3.8 | mΩ |
| Junction Temperature (Tj) | -55 to 150 | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
Instructions:
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
- Mounting: Ensure that the mounting area is clean and free from contaminants. Follow manufacturer guidelines for thermal and electrical connections.
- Operating Conditions: Do not exceed the maximum ratings specified in the table. Pay special attention to the junction temperature limits to avoid thermal damage.
- Gate Drive: Apply gate voltages within the specified range to prevent gate oxide damage.
- Storage: Store in a dry, cool place away from direct sunlight and corrosive substances.
- Soldering: Follow recommended soldering profiles to ensure reliable connections without damaging the component.
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