Details

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BUY FDS6975 https://www.utsource.net/itm/p/7076287.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	15	-	mΩ @ VGS=10V, ID=20A	On-resistance at specified conditions
Gate Threshold Voltage	VGS(th)	1.0	-	2.5	V	Gate threshold voltage
Continuous Drain Current	ID	-	-	34	A	Continuous drain current at TJ = 25°C
Pulse Drain Current	ID(p)	-	-	80	A	Pulse drain current (t=10μs, duty cycle 1%)
Power Dissipation	PD	-	-	76	W	Maximum power dissipation at TC = 25°C
Junction Temperature	TJ	-	-	150	°C	Maximum junction temperature

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking when operating near maximum power dissipation to maintain safe junction temperatures.
   • Handle the device with care to avoid damage to the gate oxide.

2. Electrical Connections:

   • Connect the source terminal to the circuit ground.
   • Ensure the gate drive voltage does not exceed the maximum rated gate-source voltage.
   • Use short leads for gate connections to minimize parasitic inductance.

3. Operating Conditions:

   • Operate within specified temperature and current limits to ensure reliable performance.
   • For pulse applications, verify that pulse width and duty cycle do not exceed recommended values.

4. Storage and Packaging:

   • Store in a dry environment to prevent moisture ingress.
   • Follow anti-static handling procedures to protect against ESD damage.

5. Testing:

   • Before installation, perform initial testing under controlled conditions to validate operation parameters.
   • Regularly inspect connections and mounting for integrity during operation.

(For reference only)