Details
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| Parameter | Description | Value |
|---|---|---|
| Part Number | Component Identifier | CM20TF-12H |
| Type | Product Category | MOSFET |
| Package | Physical Housing | TO-220 |
| Drain-Source Voltage (VDS) | Maximum Voltage between Drain and Source | 1200V |
| Gate-Source Voltage (VGS) | Maximum Voltage between Gate and Source | ±20V |
| Continuous Drain Current (ID) | Continuous Current through Drain at Tc=25°C | 20A |
| Pulse Drain Current (IDM) | Peak Pulse Current through Drain | 120A |
| Power Dissipation (Ptot) | Total Power Dissipation at Tc=25°C | 240W |
| Junction Temperature (TJ) | Operating Temperature Range for the Junction | -55°C to +150°C |
| Storage Temperature (TSTG) | Storage Temperature Range | -55°C to +150°C |
| Gate Charge (Qg) | Total Gate Charge | 75nC |
| Input Capacitance (Ciss) | Input Capacitance at VDS=10V, VGS=0V | 2600pF |
| Output Capacitance (Coss) | Output Capacitance at VDS=10V, VGS=0V | 130pF |
| Reverse Transfer Capacitance (Crss) | Reverse Transfer Capacitance at VDS=10V, VGS=0V | 180pF |
Instructions:
- Installation: Ensure that the device is installed in a well-ventilated area to facilitate heat dissipation. Use appropriate heatsinks if necessary.
- Handling Precautions: Handle with care to avoid damage to the leads and body. Follow ESD (Electrostatic Discharge) precautions to prevent damage to the sensitive components.
- Operating Conditions: Operate within specified voltage and current limits to ensure reliable performance and longevity of the device.
- Mounting: Secure the device properly to prevent mechanical stress which can lead to failures.
- Testing: Before full-scale deployment, test the device under actual operating conditions to ensure it meets all specifications.
- Storage: Store in a dry, cool place away from direct sunlight and sources of heat or moisture.
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