Details

---

BUY IXFH15N100Q3 https://www.utsource.net/itm/p/7267491.html
N-channel Power MOSFET, IXYS HiperFET? Q3 Series The IXYS Q3 class of HiperFET? Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control. Fast intrinsic rectifier diode Low RDS(on) and QG (gate charge) Low intrinsic gate resistance Industry standard packages Low package inductance High power density

Parameter	Symbol	Value	Unit	Conditions / Notes
Maximum Drain Voltage	VDSmax	1000	V	Maximum voltage that can be applied between the drain and source terminals
Maximum Gate Voltage	VGSmax	±20	V	Maximum voltage that can be applied between the gate and source terminals
Continuous Drain Current	ID	15	A	Continuous current flowing through the drain terminal at a case temperature of 25°C
Pulse Drain Current	IDM	73	A	Pulse current flowing through the drain terminal (tP = 10 μs, duty cycle = 0.1%)
Total Power Dissipation	PD	80	W	Maximum power dissipation at a case temperature of 25°C
Junction Temperature	Tj	-55 to 150	°C	Operating temperature range for the junction
Storage Temperature	Tstg	-55 to 150	°C	Temperature range for storing the device

Instructions:

1. Handling Precautions: The IXFH15N100Q3 is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe equipment.
2. Mounting: Ensure proper heat sinking when mounting to maintain operational temperatures within specified limits.
3. Voltage Ratings: Do not exceed the maximum ratings for drain-source voltage (VDSmax) and gate-source voltage (VGSmax).
4. Current Handling: For applications requiring continuous drain current above the rated value, ensure adequate cooling to prevent overheating.
5. Pulse Operation: When operating in pulse mode, ensure that the pulse duration and duty cycle do not exceed the specified values to avoid exceeding the safe operating area.
6. Thermal Management: Monitor the junction temperature (Tj) to ensure it remains within the operational range to prevent thermal damage.
7. Storage Conditions: Store the device in a dry environment within the specified storage temperature range to prevent damage.

For detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)