Details

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BUY NTMFS5C670NLT1G https://www.utsource.net/itm/p/7268357.html
N-Channel Power MOSFET, 60V, ON Semiconductor

Parameter	Value	Unit
Part Number	NTMFS5C670NLT1G
Description	N-Channel MOSFET
Package	SOIC-8
Drain Source Voltage	60	V
Continuous Drain Current	4.2 (TA=25°C)	A
Power Dissipation	0.94	W
RDS(on) Max @ VGS = 10V	13	mΩ
Gate Charge	17	nC
Total Gate Charge	24	nC
Input Capacitance	1370	pF
Operating Temperature	-55 to +150	°C

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the leads and body.
   • Use appropriate ESD protection measures as the device is sensitive to static electricity.

2. Mounting:

   • Ensure proper alignment of the device during soldering to prevent shorts between pins.
   • Follow the manufacturer's guidelines for soldering temperature and time to avoid thermal damage.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table to ensure reliable operation.
   • Keep the operating temperature within the specified range to prevent overheating or cold-induced failures.

4. Testing:

   • When testing the device, apply voltages and currents within the specified limits.
   • Use appropriate test equipment to measure parameters like RDS(on), gate charge, etc.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to protect against moisture and physical damage.

(For reference only)