Details

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BUY TPH4R606NH https://www.utsource.net/itm/p/7268429.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	6.5	-	mΩ	VGS = 10V, ID = 20A
Gate Charge	QG	-	37	-	nC	-
Input Capacitance	Ciss	-	4900	-	pF	VDS = 10V
Output Capacitance	Coss	-	850	-	pF	VDS = 10V
Threshold Voltage	VGS(th)	1.5	2.5	3.5	V	ID = 250μA
Continuous Drain Current	ID	-	20	-	A	TC = 25°C
Pulse Drain Current	IGM	-	45	-	A	tP = 10ms
Maximum Drain-Source Voltage	VDSS	-	60	-	V	-

Instructions for Use:

1. Power Handling: Ensure the drain-source voltage (VDS) does not exceed the maximum rating of 60V to prevent damage.
2. Heat Management: For continuous operation at high currents, ensure adequate heat sinking to maintain junction temperature within safe limits.
3. Gate Drive: Apply a gate-source voltage (VGS) of at least 10V to fully turn on the MOSFET and achieve the typical on-resistance (RDS(on)) value.
4. Switching Frequency: Be mindful of the gate charge (QG) when selecting switching frequencies to minimize switching losses.
5. Storage and Handling: Store in a dry environment and handle with care to avoid electrostatic discharge (ESD) damage.

Note:

• Always refer to the manufacturer's datasheet for the most accurate and detailed information.
• Ensure all parameters are within specified limits for reliable operation.

(For reference only)