Details

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BUY IRFR7740TRPBF https://www.utsource.net/itm/p/7268457.html
N-Channel Power MOSFET 60V to 80V, Infineon The Infineon range of discrete HEXFET? power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source On-Resistance	RDS(on)	VGS = 10V, ID = 4.2A		6.5		mΩ
Gate Threshold Voltage	VGS(th)	ID = 250μA	1.0	1.8	3.0	V
Continuous Drain Current	ID	TC = 25°C			7.0	A
Pulse Drain Current	IDM	tp = 10ms, Duty = 1%			40.0	A
Total Power Dissipation	PD	TC = 25°C			40.0	W
Junction Temperature	TJ		-55		150	°C
Storage Temperature Range	TSTG		-55		150	°C

Instructions for IRFR7740TRPBF:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling and installation.
2. Mounting: Ensure good thermal contact with the heat sink if operating at high current or power levels. Apply a suitable thermal interface material between the device and the heat sink.
3. Operating Limits: Do not exceed the maximum ratings listed in the parameter table. Exceeding these limits can result in permanent damage to the device.
4. Gate Drive Requirements: The gate threshold voltage (VGS(th)) defines the minimum gate-source voltage required to turn on the MOSFET. Ensure that the gate drive circuitry can provide sufficient voltage to fully enhance the MOSFET.
5. Thermal Considerations: Monitor the junction temperature (TJ) to ensure it stays within specified limits. Proper cooling solutions may be necessary depending on the application.
6. Storage and Handling: Store in a dry, cool place. Avoid exposure to high humidity and extreme temperatures.

(For reference only)