Details

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BUY CSD18532KCS https://www.utsource.net/itm/p/7269518.html
N-Channel NexFET? Power MOSFET, Texas Instruments

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS			30	V	Maximum Drain-Source voltage
Gate-Source Voltage	VGS	-10		10	V	Maximum Gate-Source voltage
Continuous Drain Current	ID		12	24	A	Continuous Drain current at TC = 25°C
Pulse Drain Current	IDpeak		60		A	Pulse Drain current (t < 10 μs, TC = 25°C)
Power Dissipation	PD			1.7	W	Total power dissipation (TC = 25°C)
Junction Temperature	Tj	-55		175	°C	Operating junction temperature range
Storage Temperature	Tstg	-65		150	°C	Storage temperature range
Thermal Resistance	RθJC		0.9		°C/W	Junction to case thermal resistance

Instructions for CSD18532KCS

1. Handling and Storage:

   • Ensure that the device is stored within the specified storage temperature range (-65°C to 150°C).
   • Handle with care to avoid damage from electrostatic discharge (ESD).

2. Mounting and PCB Design:

   • Use proper PCB layout techniques to minimize inductance.
   • Ensure adequate heat sinking if operating near maximum power dissipation.

3. Biasing and Drive Conditions:

   • Apply gate-source voltage within the specified limits (-10V to +10V).
   • Ensure the gate drive circuitry can supply sufficient current to switch the MOSFET rapidly.

4. Operating Conditions:

   • Operate within the continuous drain current limit of 24A for reliable operation.
   • For pulse applications, ensure the pulse width does not exceed 10 microseconds when using peak current up to 60A.

5. Thermal Management:

   • Monitor junction temperature to ensure it remains within the operating range (-55°C to 175°C).
   • Utilize thermal resistance data to design effective cooling solutions.

6. Testing and Validation:

   • Validate designs under worst-case conditions to ensure robustness.
   • Conduct thermal and electrical testing to confirm performance meets specifications.

(For reference only)