Details

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BUY SM8S36AHE3_A/I https://www.utsource.net/itm/p/7272222.html
PAR? Transient Voltage Suppressors SMT Unidirectional 6600W, SM8A, SM8S Series, Vishay Semiconductor

Parameter	Description
Part Number	SM8S36AHE3_A/I
Type	MOSFET
Polarity	N-Channel
VDS (Max Drain-Source Voltage)	80V
VGS (Max Gate-Source Voltage)	±20V
RDS(on) @ VGS=10V	3.6 mΩ (Typical at ID=50A, VGS=10V)
ID (Continuous Drain Current)	50A (at Tc=25°C)
PD (Power Dissipation)	100W (at Tc=25°C)
fT (Transit Frequency)	4 MHz
Qg (Total Gate Charge)	79 nC
Package	TO-247
Operating Temperature Range	-55°C to +175°C

Instructions for Use:

1. Mounting: Ensure the MOSFET is mounted on a suitable heatsink to dissipate heat effectively and maintain operating temperatures within safe limits.
2. Gate Drive: Apply gate voltage carefully not to exceed ±20V to prevent damage to the gate oxide.
3. Storage Conditions: Store in a dry environment away from direct sunlight and sources of heat.
4. Handling: Handle with care to avoid static damage; use appropriate ESD protection measures.
5. Installation: Follow manufacturer guidelines for soldering and installation to ensure proper electrical connections and thermal performance.
6. Testing: Before installing into final circuits, test the MOSFET under controlled conditions to verify functionality.

For detailed application notes and further technical support, refer to the datasheet provided by the manufacturer or contact their technical support team.

(For reference only)