Details

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BUY IS43TR16256AL-125KBL https://www.utsource.net/itm/p/7275312.html
DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin TW-BGA

Parameter	Description	Value
Device Type	High-Speed CMOS SRAM
Manufacturer	ISSI (Integrated Silicon Solution, Inc.)
Part Number	IS43TR16256AL-125KBL
Package Type	BGA	88-Pin
Memory Density	2 M x 8 bits	16 Mb
Access Time (tAA)	Access time from Address to Data Valid	12.5 ns
Cycle Time (tCYC)	Minimum Cycle Time	12.5 ns
Supply Voltage (VCC)	Operating Supply Voltage	2.5 V ± 0.2 V
Standby Current (ISB)	Supply Current in Standby Mode	10 μA (typical)
Active Current (ICC)	Supply Current in Active Mode	120 mA (typical)
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Data Retention	Data Retention at Maximum Junction Temperature	10 years
Ordering Information	Suffix "-125KBL" indicates speed grade and package type

Instructions for Use:

1. Power-Up Sequence: Ensure that the supply voltage (VCC) is stable before applying any control signals or data inputs.
2. Address Setup Time: Maintain the address setup time (tAS) of at least 2 ns before the falling edge of the clock signal.
3. Signal Integrity: Keep signal integrity considerations in mind to avoid metastability issues. Ensure proper termination and trace lengths for high-speed operations.
4. Thermal Management: Given the operational temperature range, ensure adequate cooling if used in environments approaching the upper limit.
5. Handling Precautions: Handle the device with care to prevent electrostatic discharge (ESD) damage. Use appropriate ESD protection measures during assembly and handling.
6. Storage Conditions: Store the device in a controlled environment to prevent damage due to moisture or extreme temperatures.

For detailed specifications and additional information, refer to the official datasheet provided by ISSI.

(For reference only)