STD35P6LLF6

STD35P6LLF6


Specifications
SKU
7300417
Details

BUY STD35P6LLF6 https://www.utsource.net/itm/p/7300417.html
Trans MOSFET P-CH 60V 35A 3-Pin(2+Tab) DPAK T/R
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage VCEO 600 V
Emitter-Collector Voltage VECEO 600 V
Collector-Base Voltage VCBO 600 V
Emitter-Base Voltage VEBO -5 5 V
Continuous Collector Current ICM Tc = 25°C 35 A
Total Device Dissipation Ptot Tc = 25°C, θJC = 1.2°C/W 175 W
Junction Temperature Tj -55 175 °C
Storage Temperature Tstg -55 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper handling to avoid damage to the STD35P6LLF6. Use appropriate anti-static measures.
    • Mount the device in a way that ensures good thermal contact with the heatsink if necessary.
  2. Electrical Connections:

    • Verify all electrical connections are correct and secure before applying power.
    • Pay attention to polarity; incorrect connections can lead to device failure.
  3. Thermal Management:

    • Monitor the junction temperature (Tj) to ensure it stays within the specified limits (-55°C to 175°C).
    • Use a heatsink if the application requires operating at higher currents or in high ambient temperatures.
  4. Power-Up Sequence:

    • Power up the device gradually to avoid thermal shock.
    • Ensure that the supply voltage does not exceed the maximum ratings listed.
  5. Operational Environment:

    • Keep the device within the storage temperature range (-55°C to 150°C) when not in use.
    • Protect from moisture and corrosive environments.
  6. Safety Considerations:

    • Always follow safety guidelines when working with high voltages and currents.
    • Ensure the device is properly insulated to prevent accidental short circuits.
(For reference only)

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