BZX84C16-GS08

BZX84C16-GS08

Category: Transistors

Specifications
SKU
7318111
Details

BUY BZX84C16-GS08 https://www.utsource.net/itm/p/7318111.html
BZX84C16-GS08 Zener Diodes 16V 300mW/0.3W SOT23-16V marking KY5 low power
Parameter Symbol Value Unit Description
Breakdown Voltage VBR 16 V Breakdown voltage at specified test current
Test Current IT 5 mA Current at which breakdown voltage is measured
Maximum Repetitive Peak Reverse Current IPRM 1.0 mA Maximum repetitive peak reverse current
Maximum DC Reverse Current IR 5.0 μA Maximum DC reverse current at 25°C
Operating Junction Temperature TJ -55 to 150 °C Operating temperature range for the junction
Storage Temperature Range TSTG -55 to 150 °C Temperature range for storage
Capacitance Cj 400 pF Junction capacitance at 0V bias
Power Dissipation PD 125 mW Maximum power dissipation at 25°C

Instructions for Use:

  1. Mounting: Ensure that the component is mounted on a PCB with adequate thermal management, especially if operating near maximum power dissipation.
  2. Handling: Handle with care to avoid damage to the leads and body of the component. Use appropriate ESD protection.
  3. Soldering: Solder within the recommended temperature and time limits to prevent damage. Avoid excessive heating.
  4. Testing: During testing, do not exceed the maximum ratings provided in the table. Use the specified test conditions for accurate measurements.
  5. Storage: Store in a dry, cool place within the specified storage temperature range to ensure long-term reliability.
  6. Application: Suitable for general-purpose applications where a precise Zener voltage reference is required.
(For reference only)

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