Details

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BUY 2SB710A-S https://www.utsource.net/itm/p/7321301.html
2SB710A-S PNP transistors(BJT) -60V -500mA/-0.5A 200MHz 170~340 -600mV/-0.6V SOT-23/SC-59 marking DS amplifier

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO				60	V
Collector-Base Voltage	VCBO				60	V
Emitter-Base Voltage	VEBO				5	V
Collector Current	IC				1	A
Base Current	IB				100	mA
DC Current Gain	hFE	IC = 150mA, VCE=5V	100	300	700
Transition Frequency	fT	IC = 150mA		250		MHz
Storage Temperature	Tstg		-55		150	°C
Operating Temperature	Topr		-55		150	°C

Instructions for Use:

1. Handling Precautions:

   • Avoid exposure to static electricity; use proper ESD protection.
   • Handle with care to prevent damage to the leads or body of the transistor.

2. Mounting:

   • Ensure that the mounting surface is clean and flat.
   • Apply appropriate thermal paste if used in high-power applications.
   • Tighten screws evenly to avoid warping the heat sink or damaging the transistor.

3. Electrical Connections:

   • Verify correct polarity before connecting.
   • Do not exceed the maximum ratings listed in the parameter table.
   • Use adequate PCB trace widths to handle the current levels specified.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep components in anti-static packaging until ready for use.

5. Testing:

   • Test within the specified operating conditions.
   • Use compatible test equipment to avoid overstressing the device.

6. Application Notes:

   • Refer to manufacturer application notes for detailed circuit design considerations.
   • Consider using a heatsink if operating near maximum power dissipation.

(For reference only)