Details

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BUY PMBT2369 https://www.utsource.net/itm/p/7321609.html
PMBT2369 NPN Transistors(BJT) 40V 200mA/0.2A 500MHz 120 250mV/0.25V SOT-23/SC-59 marking 1J switch

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	40	V	Maximum voltage between collector and emitter with the base open.
Emitter-Collector Voltage	VEBO	-	-	5	V	Maximum voltage between emitter and base with the collector open.
Collector-Emitter Saturation Voltage	VCEsat	0.1	-	0.2	V	Collector-emitter voltage at a specified IC and IB.
Base-Emitter Saturation Voltage	VBEsat	0.6	-	0.9	V	Base-emitter voltage at a specified IC and IB.
Continuous Collector Current	IC	-	-	0.2	A	Maximum continuous current through the collector.
Total Device Dissipation	PD	-	-	350	mW	Maximum power dissipation at TAMB = 25°C.
Junction Temperature	TJ	-	-	150	°C	Maximum allowable junction temperature.
Storage Temperature Range	TSTG	-55	-	150	°C	Temperature range for storage and operation.

Instructions:

1. Handling: The PMBT2369 is sensitive to electrostatic discharge (ESD). Use proper handling procedures, such as anti-static wrist straps and mats.
2. Mounting: Ensure that the device is mounted in a way that allows adequate heat dissipation if operating near its maximum power dissipation limits.
3. Biasing: When designing circuits, ensure that the base-emitter and collector-emitter voltages do not exceed their maximum ratings to prevent damage to the transistor.
4. Current Limiting: Incorporate appropriate resistors or current-limiting mechanisms to protect the PMBT2369 from exceeding its maximum collector current rating.
5. Temperature Monitoring: Monitor the ambient temperature and ensure it remains within the operational range to avoid overheating and potential failure.
6. Testing: During testing, apply voltages and currents gradually to observe the behavior of the transistor under different conditions without causing damage.

(For reference only)