Details

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BUY 2SB815B7 https://www.utsource.net/itm/p/7322343.html
2SB815B7 PNP transistors(BJT) -20V -700mA/-0.7A 250MHz 300~600 -60mV SOT-23/CP marking B7 large current/low saturation voltage

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	800	V	Maximum voltage between collector and emitter with base open.
Emitter-Base Voltage	VEBO	-5	-	5	V	Maximum voltage between emitter and base.
Collector Current	IC	-	-	15	A	Continuous collector current.
Power Dissipation	PD	-	-	125	W	Maximum power dissipation at Tc = 25°C.
Junction Temperature	TJ	-55	-	150	°C	Operating junction temperature range.
Storage Temperature	TSTG	-55	-	150	°C	Storage temperature range.

Instructions for Use:

1. Mounting: Ensure proper heat sinking to manage the power dissipation, especially when operating near the maximum power limits.
2. Biasing: Carefully set the biasing conditions to avoid exceeding the maximum ratings for VCEO and VEBO.
3. Current Handling: Do not exceed the specified continuous collector current (IC) to prevent damage or overheating.
4. Temperature Management: Monitor the junction temperature (TJ) to ensure it remains within the operational range to maintain reliability.
5. Storage and Handling: Store in a controlled environment within the storage temperature (TSTG) range to prevent damage from extreme temperatures.
6. Safety Precautions: Always use appropriate safety measures when handling high voltages and currents associated with this device.

(For reference only)